Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4511GD

Manufacturer Part NumberAP4511GD
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4511GD datasheet
 

Specifications of AP4511GD

Vds35VVgs±20V
Rds(on) / Max(m?) Vgs@10v25Rds(on) / Max(m?) Vgs@4.5v37
Qg (nc)11Qgs (nc)3
Qgd (nc)6Id(a)7
Pd(w)2ConfigurationComplementary N-P
PackagePDIP-8  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 5/8

Download datasheet (157Kb)Embed
PrevNext
N-Channel
16
I
=7A
D
V
=28V
DS
12
8
4
0
0
5
10
15
Q
, Total Gate Charge (nC)
G
Fig 7. Gate Charge Characteristics
100
10
1
0.1
o
T
=25
C
A
Single Pulse
0.01
0.1
1
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Maximum Safe Operating Area
30
V
=5V
DS
20
o
T
=25
C
j
10
0
0
2
V
, Gate-to-Source Voltage (V)
GS
Fig 11. Transfer Characteristics
1000
100
10
20
25
1
Fig 8. Typical Capacitance Characteristics
1
100us
0.1
1ms
10ms
100ms
0.01
1s
DC
0.001
10
100
0.0001
Fig 10. Effective Transient Thermal Impedance
4.5V
o
T
=150
C
j
4
6
Fig 12. Gate Charge Waveform
AP4511GD
f=1.0MHz
5
9
13
17
21
25
V
, Drain-to-Source Voltage (V)
DS
Duty factor=0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
Single Pulse
T
Duty factor = t/T
Peak T
= P
x R
j
DM
thja
o
R
=90
C/W
thja
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V
G
Q
G
Q
Q
GS
GD
Charge
C
iss
C
oss
C
rss
29
+ T
a
100
Q
5