Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4511GD

Manufacturer Part NumberAP4511GD
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4511GD datasheet
 

Specifications of AP4511GD

Vds35VVgs±20V
Rds(on) / Max(m?) Vgs@10v25Rds(on) / Max(m?) Vgs@4.5v37
Qg (nc)11Qgs (nc)3
Qgd (nc)6Id(a)7
Pd(w)2ConfigurationComplementary N-P
PackagePDIP-8  
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AP4511GD
P-Channel
50
o
T
= 25
C
A
40
30
20
10
0
0
1
2
-V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
110
90
70
50
30
2
4
6
-V
,Gate-to-Source Voltage (V)
GS
Fig 3. On-Resistance v.s. Gate Voltage
6
4
o
T
=150
C
j
2
0
0
0.2
0.4
0.6
-V
, Source-to-Drain Voltage (V)
SD
Fig 5. Forward Characteristic of
Reverse Diode
50
-10V
-7.0V
40
-5.0V
-4.5V
30
20
V
= - 3.0V
G
10
0
0
3
4
5
1.4
I
= -4 A
D
o
T
=25
C
A
1.2
1.0
0.8
0.6
-50
8
10
1.6
1.2
o
T
=25
C
j
0.8
0.4
-50
0.8
1
1.2
o
T
= 150
C
A
V
G
1
2
3
4
-V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
I
=-6A
D
V
=-10V
G
0
50
100
o
T
, Junction Temperature (
C)
j
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0
50
100
o
T
, Junction Temperature (
C)
j
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
-10V
-7.0V
-5.0V
-4.5V
= - 3.0V
5
150
150
6