The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4511GM

Manufacturer Part NumberAP4511GM
DescriptionThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4511GM datasheet
 

Specifications of AP4511GM

Vds35VVgs±20V
Rds(on) / Max(m?) Vgs@10v25Rds(on) / Max(m?) Vgs@4.5v37
Qg (nc)11Qgs (nc)3
Qgd (nc)6Id(a)7
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
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Advanced Power
Electronics Corp.
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Low On-resistance
▼ ▼ ▼ ▼ Fast Switching Performance
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D2
D2
D1
D1
D1
D1
G2
G2
S2
G1
S2
SO-8
G1
S1
SO-8
S1
N-channel
3
3
1
Parameter
3
AP4511GM
Pb Free Plating Product
N-CH BV
35V
DSS
R
25mΩ
DS(ON)
I
7A
D
P-CH BV
-35V
DSS
R
40mΩ
DS(ON)
I
-6.1A
D
D1
G2
G1
S1
Rating
Units
P-channel
35
-35
±20
±20
7
-6.1
5.7
-5
30
-30
2.0
0.016
W/℃
-55 to 150
-55 to 150
Value
Unit
℃/W
Max.
62.5
201122041
D2
S2
V
V
A
A
A
W

AP4511GM Summary of contents

  • Page 1

    ... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO SO-8 S1 N-channel Parameter 3 AP4511GM Pb Free Plating Product N-CH BV 35V DSS R 25mΩ DS(ON P-CH BV -35V DSS R 40mΩ DS(ON) I -6. Rating Units P-channel ...

  • Page 2

    ... AP4511GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... D V =-28V DS V =-4. =-18V =3.3Ω, =18Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-6A dI/dt=-100A/µs AP4511GM Min. Typ. Max. Units -35 - =-1mA - -0. =-250uA - ...

  • Page 4

    ... AP4511GM N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

  • Page 5

    ... DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 AP4511GM f=1.0MHz Drain-to-Source Voltage (V) DS Fig 8. Typical Capacitance Characteristics Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse Duty factor = t/T Peak ...

  • Page 6

    ... AP4511GM P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4511GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...