AP4515GM Advanced Power Electronics Corp., AP4515GM Datasheet - Page 5

• Manufacturer Part Number: AP4515GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4515GM

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 22
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 11
• Qgs (nc): 3.5
• Qgd (nc): 6
• Id(a): 7.7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
10
1
12
10
40
30
20
10
0.1
8
6
4
2
0
0
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
DS
Single Pulse
V
T
I
DS
4
=5V
V
D
A
DS
Q
= 7 A
V
= 25 V
=25
G
GS
2
, Drain-to-Source Voltage (V)
T
, Total Gate Charge (nC)
o
, Gate-to-Source Voltage (V)
j
1
C
=25
8
o
C
12
4
10
T
16
j
=150
6
o
20
C
100us
100ms
10ms
1ms
DC
1s
100
24
8
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
100
0.01
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.01
0.02
Single Pulse
0.05
G
0.2
0.1
5
Duty factor=0.5
0.001
V
DS
Q
GS
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.01
Q
Q
13
G
GD
Charge
0.1
17
P
Duty factor = t/T
Peak T
R
DM
thja
1
AP4515GM
= 135℃/W
21
j
= P
t
DM
T
f=1.0MHz
x R
10
thja
25
+ T
C
C
a
C
Q
oss
rss
iss
100
29
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