AP4515GM Advanced Power Electronics Corp., AP4515GM Datasheet - Page 6

• Manufacturer Part Number: AP4515GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4515GM

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 22
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 11
• Qgs (nc): 3.5
• Qgd (nc): 6
• Id(a): 7.7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4515GM
110
50
40
30
20
10
90
70
50
30
0
5
4
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
0.2
-V
-V
Reverse Diode
-V
T
GS
DS
j
2
4
SD
=150
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
o
C
T
A
= 25
0.6
4
6
o
C
0.8
T
I
A
D
6
=25
V
8
= -3 A
T
G
j
=25
= -3.0 V
o
1
- 7.0 V
- 5.0 V
- 4.5 V
-10 V
C
o
C
1.2
8
10
1.7
1.4
1.1
0.8
0.5
50
40
30
20
10
1.5
1.1
0.7
0.3
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
=150
V
I
-V
G
D
= -10 V
v.s. Junction Temperature
Junction Temperature
= -5 A
T
DS
o
j
C
0
2
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
T
j
, Junction Temperature (
50
50
4
o
100
100
V
6
C)
G
o
= - 3.0 V
- 7.0 V
- 5.0 V
- 4.5 V
C)
-10 V
150
150
8
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