The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4519GED

Manufacturer Part NumberAP4519GED
DescriptionThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4519GED datasheet
 


Specifications of AP4519GED

Vds35VVgs±20V
Rds(on) / Max(m?) Vgs@10v32Rds(on) / Max(m?) Vgs@4.5v48
Qg (nc)10Qgs (nc)3
Qgd (nc)5Id(a)6.2
Pd(w)2ConfigurationComplementary N-P
PackagePDIP-8  
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Advanced Power
Electronics Corp.
▼ ▼ ▼ ▼ Low Gate Charge
▼ ▼ ▼ ▼ Fast Switching Speed
▼ ▼ ▼ ▼ PDIP-8 Package
▼ ▼ ▼ ▼ RoHS Compliant
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D1
D1
G2
S2
PDIP-8
G1
S1
N-channel
3
3
1
Parameter
3
AP4519GED
Pb Free Plating Product
N-CH BV
35V
DSS
R
32mΩ
DS(ON)
I
6.2A
D
P-CH BV
-35V
DSS
R
64mΩ
DS(ON)
I
-5.0A
D
D1
G1
G2
S1
Rating
Units
P-channel
35
-35
±20
±20
6.2
-5.0
5.0
-4.0
30
-30
2.0
0.016
W/℃
-55 to 150
-55 to 150
Value
Unit
℃/W
Max.
62.5
201128052-1/7
D2
S2
V
V
A
A
A
W

AP4519GED Summary of contents

  • Page 1

    ... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4519GED Pb Free Plating Product N-CH BV 35V DSS R 32mΩ DS(ON) I 6.2A D P-CH BV -35V DSS R 64mΩ DS(ON) I -5. ...

  • Page 2

    ... AP4519GED N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... =- =-25V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.5A =-5A dI/dt=-100A/µs AP4519GED Min. Typ. Max. Units -35 - =-1mA - -0. =-250uA - ...

  • Page 4

    ... AP4519GED N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

  • Page 5

    ... DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 AP4519GED f=1.0MHz Drain-to-Source Voltage (V) DS Fig 8. Typical Capacitance Characteristics Duty factor=0.5 0.2 0.1 0. 0.02 0.01 Duty factor = t/T Peak Single Pulse ...

  • Page 6

    ... AP4519GED P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 150 130 110 ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 C j -4. Fig 12. Gate Charge Waveform AP4519GED f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 T 0.01 Duty factor = t/T Peak ...