Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP92T12GP-HF

Manufacturer Part NumberAP92T12GP-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP92T12GP-HF datasheet
 


Specifications of AP92T12GP-HF

Vds120VVgs±20V
Rds(on) / Max(m?) Vgs@10v8.5Qg (nc)97
Qgs (nc)27Qgd (nc)8
Id(a)130Pd(w)375
ConfigurationSingle NPackageTO-220
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200
o
T
= 25
C
C
160
120
80
40
0
0
4
8
12
16
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50
100
T
, Junction Temperature (
j
Fig 3. Normalized BV
v.s. Junction
DSS
Temperature
40
30
o
T
=175
C
T
=25
j
j
20
10
0
0
0.2
0.4
0.6
0.8
V
, Source-to-Drain Voltage (V)
SD
Fig 5. Forward Characteristic of
Reverse Diode
160
10V
9.0V
8.0V
120
7.0V
80
40
V
=6.0V
GS
0
20
24
0
V
Fig 2. Typical Output Characteristics
3.0
I
=30A
D
V
=10V
2.6
G
2.2
1.8
1.4
1.0
0.6
0.2
-50
150
200
o
C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
o
C
0.8
0.4
0.0
1
1.2
-50
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP92T12GP-HF
o
T
= 175
C
C
10V
9.0V
8.0V
7.0V
V
=6.0V
GS
4
8
12
16
, Drain-to-Source Voltage (V)
DS
0
50
100
150
200
o
T
, Junction Temperature (
C)
j
0
50
100
150
200
o
T
, Junction Temperature (
C)
j
3