CM800E6C-66H

Manufacturer Part NumberCM800E6C-66H
ManufacturerPowerex Inc
TypeIGBT Module
CM800E6C-66H datasheet
 

Specifications of CM800E6C-66H

Voltage3300VCurrent800A
Circuit ConfigurationChopperRohs CompliantNo
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3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800E6C-66H
APPLICATION
Traction drives, DC choppers, Dynamic braking choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
190
0.5
171
0.1
57
57
0.1
0.1
C
CM
E
E
G
C
20.25
41.25
3 - M4 NUTS
79.4
0.3
61.5
0.3
screwing depth
min. 7.7
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
I
C ...................................................................
V
CES .......................................................
Insulated Type
1-element in a Pack (for brake)
AISiC Baseplate
6 - M8 NUTS
57
0.1
C
G
E
C
C
E
E
0.2
8 - 7
MOUNTING HOLES
0.1
0.3
screwing depth
min. 16.5
61.5
0.3
13
0.2
5.2
0.2
INSULATED TYPE
800A
3300V
Dimensions in mm
C
C
K
(C)
E
E
A
(E)
CIRCUIT DIAGRAM
15
0.2
40
0.3
LABEL
Jul. 2005

CM800E6C-66H Summary of contents

  • Page 1

    ... 20.25 41. NUTS 79.4 0.3 61.5 0.3 screwing depth min. 7.7 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... Insulated Type 1-element in a Pack (for brake) AISiC Baseplate NUTS MOUNTING HOLES 0 ...

  • Page 2

    ... di/dt = 2600A 125 100nH j s Inductive load ) does not exceed T j rating (150 C). jmax MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 20 800 (Note 1) 1600 800 (Note 1) 1600 9600 –40 ~ +150 –40 ~ +125 – ...

  • Page 3

    ... Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part Clamp-Di part IGBT part Clamp-Di part C MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 13.0 K/kW — — 25.0 K/kW — ...

  • Page 4

    ... 125 1200 1600 0 MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) = 20V 125 GATE-EMITTER VOLTAGE ( V ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS ( TYPICAL ) T ...

  • Page 5

    ... 125 C, Inductive load off 2 E rec 1 0 1200 1600 0 MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE CHARACTERISTICS ( TYPICAL ) = 1650V 800A GATE CHARGE ( C ) HALF-BRIDGE ( TYPICAL ) = 1650V 800A C = 15V off ...

  • Page 6

    ... MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE ( TYPICAL ) = 1650V 15V 2.5 G(off ...

  • Page 7

    ... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules RECOVERY SAFE OPERATING AREA 2500 125 C j 2000 1500 1000 500 0 3000 4000 0 EMITTER-COLLECTOR VOLTAGE ( V ) MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE REVERSE ( RRSOA ) 2200V, di/dt 3600A/ s 1000 2000 3000 4000 Jul. 2005 ...