BSM200GA120DN2C Infineon Technologies, BSM200GA120DN2C Datasheet

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BSM200GA120DN2C

Manufacturer Part Number
BSM200GA120DN2C
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM200GA120DN2C

Ic (max)
200.0 A
Vce(sat) (typ)
2.5 V
Configuration
single switch
Technology
IGBT2 Standard
Housing
62 mm

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM200GA120DN2C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
BSM 200 GA 120 DN2
IGBT Power Module
• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 200 GA 120 DN2
BSM 200 GA 120 DN2 S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 300A
1200V 300A
CE
I
C
1
Package
SINGLE SWITCH 1
SSW SENSE 1
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67076-A2006-A70
C67070-A2006-A70
+ 150
± 20
1200
1200
1550
2500
300
200
600
400
0.08
0.15
F
20
11
Oct-27-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM200GA120DN2C Summary of contents

Page 1

BSM 200 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 200 GA 120 DN2 BSM 200 GA 120 DN2 S Maximum Ratings Parameter Collector-emitter voltage ...

Page 2

BSM 200 GA 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 200 ...

Page 3

BSM 200 GA 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 4.7 Gon Rise time V = 600 V, ...

Page 4

BSM 200 GA 120 DN2 Power dissipation tot C parameter: T 150 °C j 1600 W P tot 1200 1000 800 600 400 200 Collector current ...

Page 5

BSM 200 GA 120 DN2 Typ. output characteristics parameter µ ° 400 A 17V 15V I 13V C 300 11V 9V 7V 250 200 150 ...

Page 6

BSM 200 GA 120 DN2 Typ. gate charge Gate parameter 200 A C puls 600 200 400 600 ...

Page 7

BSM 200 GA 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...

Page 8

BSM 200 GA 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 400 300 250 T =125°C j 200 150 100 50 0 0.0 0.5 1.0 1.5 Transient ...

Page 9

BSM 200 GA 120 DN2 Package Outlines Dimensions in mm Weight: 420 g Circuit Diagram 9 Oct-27-1997 ...

Page 10

Technische Information / Technical Information IGBT-Module BSM200GA120DN2 IGBT-Modules Anhang C-Serie Appendix C-series Gehäuse spezifische Werte Housing specific values Modulinduktivität stray inductance module Gehäusemaße C-Serie Package outline C-series typ sCE Appendix C-series nH Appendix_C-Serie_BSM200GA120DN2.xls 2001-09-20 ...

Page 11

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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