T640N Infineon Technologies, T640N Datasheet - Page 6

• Manufacturer Part Number: T640N
• Manufacturer: Infineon Technologies

Specifications of T640N

• Vdrm/ Vrrm (v): 1,200.0 - 1,800.0 V
• Itsm: 8,000.0 A
• Itavm: 644 (180 ° el sin)
• Housing: Disc dia 48mm height 14mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

IFBIP D AEC / 2010-01-13, H.Sandmann
N
Phase Control Thyristor
140
120
100
1600
1400
1200
1000
Netz-Thyristor
80
60
40
20
800
600
400
200
0
0
0
0°
0°
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature T
100
100
0
0
Durchlassverlustleistung / On-state power loss P
200
Parameter: Stromflusswinkel Θ / Current conduction angle Θ
Parameter: Stromflusswinkel Θ / Current conduction angle Θ
200
Datenblatt / Data sheet
180°
180°
Sinusförmiger Strom / Sinusoidal current
Sinusförmiger Strom / Sinusoidal current
Beidseitige Kühlung / Two-sided cooling
Durchlassverluste
300
θ = 30°
300
θ = 30°
T640N
400
400
A 01/10
I
60°
TAV
I
TAV
[A]
60°
[A]
500
500
90°
90°
600
600
TAV
= f(I
120°
TAV
120°
700
700
)
C
= f(I
Seite/page
180°
800
800
TAV
180°
)
900
900
6/10