T730N Infineon Technologies, T730N Datasheet - Page 8

• Manufacturer Part Number: T730N
• Manufacturer: Infineon Technologies

Specifications of T730N

• Vdrm/ Vrrm (v): 3,800.0 - 4,200.0 V
• Itsm: 15,800.0 A
• Itavm: 730 (180 ° el sin)
• Housing: Disc dia 75mm height 26mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

IFBIP D AEC / 2008-09-15, H.Sandmann
N
Phase Control Thyristor
100
100000
0,1
10
10000
1000
1
10
Netz-Thyristor
1
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P
Steuercharakteristik v
Gate characteristic v
Sperrverzögerungsladung / Recovered charge Q
Datenblatt / Data sheet
a - 20W / 10ms
Parameter: Durchlassstrom / On-state current i
100
T
vj
= T
Steuerkennlinie
vjmax
Zündverzug
G
, v
G
= f (i
= f (i
R
T730N
b - 40W / 1ms
≤ 0,5 V
G
A 45/08
G
) with triggering area for V
i
) mit Zündbereichen für V
G
[mA]
RRM
10
, V
RM
c - 60W / 0,5ms
= 0,8 V
RRM
1000
r
= f(di/dt)
TM
D
D
= 12 V
= 12 V
-di/dt [A/µs]
Seite/page
a
GM
= f (t
b
g
) :
2000A
1000A
c
500A
100A
200A
i
10000
TM
50A
8/10
=
100