T731N Infineon Technologies, T731N Datasheet - Page 6

• Manufacturer Part Number: T731N
• Manufacturer: Infineon Technologies

Specifications of T731N

• Vdrm/ Vrrm (v): 3,600.0 - 4,400.0 V
• Itsm: 16,000.0 A
• Itavm: 910 (180 ° el sin)
• Housing: Disc dia 75mm height 26mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

BIP AM / SM PB, 2001-12-14, Przybilla J. / Keller
Phase Control Thyristor
N
v
G
Netz-Thyristor
[V]
20
10
5
2
1
0,5
0,2
30
Höchstzulässige Spitzensteuerv erlustleistung / Maximum rated peak gate power dissipation P
10
20
Steuercharakteristik v
Gate characteristic v
Datenblatt / Data sheet
50
a - 20 W/10ms
Durchlassverluste
+ 125°C
100
G
G
= f (i
T 731N
= f (i
b - 40 W/1ms
G
200
G
) with triggering area for V
+25°C
) mit Zündbereichen für V
i
G
[m A]
-40° C
c - 60 W/0,5ms
500
1000
D
D
= 6 V
= 6 V
2000
Seite/page
GM
a
= f (t
5000
g
) :
b
10000
c
6/9