T1551N Infineon Technologies, T1551N Datasheet - Page 2

• Manufacturer Part Number: T1551N
• Manufacturer: Infineon Technologies

Specifications of T1551N

• Vdrm/ Vrrm (v): 4,800.0 - 5,200.0 V
• Itsm: 43,000.0 A
• Itavm: 1770 (180 ° el sin)
• Housing: Dia 120mm height 26mm / Ceramic
• Configuration: Phase Control Thyristors / SCR Diode Discs

Date of Publication: 2011-05-02
Phase Control Thyristor
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Kritische Stromsteilheit
critical rate of rise of on-state current
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltage
Grenzlastintegral
I²t-value
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
approved by: JP
prepared by: TM
Netz-Thyristor
v
T

A

B

i
T

C

200A  i
Ln
i (
T
Elektrische Eigenschaften

F
date of publication:
 2500A
) 1

D

Technische Information /
i
revision:
T
technical information
T1551N
2011-05-02
Revision: 8.0
T
T
T
T
T
T
T
T
T
DIN IEC 60747-6
f = 50 Hz, i
T
5.Kennbuchstabe / 5
T
T
T
T
T
T
T
T
T
T
T
v
DIN IEC 60747-6
T
T
i
GM
D
vj
C
C
C
C
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
= V
= 25 °C,i
= -40°C... T
= 85 °C
= 85 °C
= 70 °C
= 55 °C
= 25 °C, t
= T
= 25 °C, t
= T
= T
= T
= T
= T
= T
= 25°C, v
= 25°C, v
= T
= T
= T
= 25°C, v
= T
= 25°C, v
= 3 A, di
8
DRM
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
, v
, t
, t
, v
GM
, i
, v
, v
, v
GM
R
P
P
D
D
D
G
P
P
D
T
D
D
D
D
/dt = 6 A/µs, t
= V
= 10 ms
= 10 ms
= 3 A, di
= 12 V
= 12 V
= 12 V
= 10 ms
= 10 ms
= 0,67 V
= 2000A
= 3 A, di
vj max
= 12 V, R
= 12 V
= 0,5 V
= 0,5 V
RRM
th
G
letter H
DRM
DRM
G
DRM
/dt = 6 A/µs
/dt = 6 A/µs
GK
≥ 10 Ω
g
= 20 µs
V
I
I
I
I²t
(di
(dv
v
V
r
typ.
max.
I
V
I
V
I
I
i
t
TRMSM
TAVM
TSM
GT
GD
H
L
D
gd
T
T
DRM
(TO)
GT
GD
, i
T
D
/dt)
R
/dt)
,V
cr
RRM
cr
A
B
C -0,0127
D 0,02
A
B
C 0,00534
D 0,0164
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
0,497
0,000137
0,539
0,000193
typ.
typ.
typ.
44000
43000
0,345
4800
5000
5200
2780 A
1770
2140
2470
9680
9250
2000 V/µs
1,57
0,88
0,92
0,39
Seite/page: 2/11
300 A/µs
350 mA
350 mA
400 mA
1,7
2,5 V
0,4 V
20
10
3 A
2 µs
V
V
V
A
A
A
A
A
10³ A²s
10³ A²s
V
V
V
V
mΩ
mΩ
mA
mA