D475N Infineon Technologies, D475N Datasheet - Page 3

• Manufacturer Part Number: D475N
• Manufacturer: Infineon Technologies

Specifications of D475N

• Vrrm (max): 3,600.0 V
• Ifsm (max): 10,900.0 A
• Ifavm/tc: 475/100 (180 ° el sin)
• Housing: SW41 M24x1,5
• Features: Rectifier Diodes

I
[kA]
F(0V)M
i
F
2,0
1,5
1,0
0,5
[kA]
14
12
10
0
8
6
4
2
0
0
D 475N_1
0
D 475 N
Bild/Fig. 1
Grenzdurchlaßkennlinie
Limiting forward characteristic i
Bild / Fig. 3
Grenzstrom / Maximum overload forward current I
1 - I
2 - I
a - v
b - v
c - v
D475N_5
FAV(vor)
FAV(vor)
R
R
R
= 0,8 V
= 0,5 V
50 V
t
t
= 0 A;
= 475 A;
vj
vj
0,5
= 160 °C
= 25 °C
RRM
RRM
t
vj
0,1
= t
t
C
C
= 100 °C; t
1,0
= 25 °C
F
= f (v
I
F(0V)M
vj
F
)
= 160 °C
1,5
0,2
v
F
t [s]
[V]
F(0V)M
2,0
= f(t)
1a
2a
1b
1c
2b
2c
v
R
0,3
2,5
(normiert)
I
[kA]
F(0V)M
i²dt
1,0
0,9
0,8
0,7
0,6
0,5
14
12
10
8
6
4
2
0
0
Bild / Fig. 2
Normiertes Grenzlastintegral / Normalized i²t
Bild / Fig. 4
Grenzstrom / Maximum overload forward current I
1 - I
2 - I
a - v
b - v
c - v
0
D475N_6
D475K_4
i²dt = f(t
FAV(vor)
FAV(vor)
R
R
R
= 0,8 V
1
= 0,5 V
50 V
p
)
= 0 A;
= 475 A;
2
RRM
RRM
3
t
vj
0,1
= t
t
C
C
= 100 °C; t
4
= 25 °C
I
5
F(0V)M
vj
= 160 °C
6
0,2
7
t [ms]
p
t [s]
F(0V)M
8
= f(t)
9
v
1a
2a
1b
1c
2b
2c
R
0,3
10