D291S Infineon Technologies, D291S Datasheet - Page 4

• Manufacturer Part Number: D291S
• Manufacturer: Infineon Technologies

Specifications of D291S

• Vrrm (max): 3,500.0 - 4,500.0 V
• Ifsm (max): 4,500.0 A
• Ifavm/tc: 290A / 85 (180 ° el sin)
• Housing: Dia 58mm height 26mm / Ceramic
• Configuration: Fast Rectifier Diodes

I
[A]
Q
[µAs]
RM
1000
1000
rr
700
500
400
300
200
100
10
10
10
D 291 S_04
Fig. 5
Reverse recovery current (upper limit ca. 98% value)
I
Parameter: I
t
R
D 291 S_07
Fig. 7
Reverse recovery charge (upper limit ca. 98% value)
Q
Parameter: I
t
R
vj
5
2
7
5
4
3
2
vj
RM
9
7
5
4
3
2
9
7
5
4
3
2
2
S
S
rr
= 6
= 6
= f(di/dt)
= f(di/dt)
125°C; C
125°C; C
V
V
R(Spr)
R(Spr)
2
2
FM
FM
S
S
= 0,125 µF
= 0,1 µF
= 1000 V
= 1000 V
3
3
4
4
5 6 7 8 9
5 6 7 8 9
100
100
I
FM
-di/dt [A/µs]
= 3000A
-di/dt [A/µs]
I
FM
2
2
I
I
FM
FM
-di/dt
-di/dt
= 3000A
I
I
2000A
1000A
600A
300A
100A
RM
RM
1000A
600A
300A
100A
3
3
4
4
Q
Q
rr
rr
5 6 7 8 9
5 6 7 8 9
V
V
R(Spr)
R(Spr)
1000
1000
Q
[µAs]
I
[A]
RM
1000
rr
1000
700
500
400
300
200
100
100
10
10
10
D 291 S_05
Fig. 6
Reverse recovery current (lower limit ca. 2% value)
I
Parameter: I
t
R
Fig. 8
Reverse recovery charge (lower limit ca. 2% value)
Q
Parameter: I
t
R
D 291 S_06
vj
5
2
7
5
4
3
2
vj
RM
9
7
5
4
3
2
9
7
5
4
3
2
S
S
rr
= 6
= 6
= f(di/dt)
125°C; C
125°C; C
= f(di/dt)
V
V
R(Spr)
R(Spr)
2
FM
2
FM
S
S
= 0,125 µF
= 0,1 µF
= 1000 V
= 1000 V
3
3
4
4
5 6 7 8 9
5 6 7 8 9
100
100
I
FM
= 3000A
-di/dt [A/µs]
-di/dt [A/µs]
I
I
FM
FM
-di/dt
2
2
I
FM
-di/dt
= 3000A
I
RM
I
2000A
1000A
RM
1000A
600A
300A
100A
600A
300A
100A
3
3
Q
4
4
rr
Q
D 291 S
rr
5 6 7 8 9
5 6 7 8 9
V
R(Spr)
V
R(Spr)
1000
1000