BTS 50090-1TMB Infineon Technologies, BTS 50090-1TMB Datasheet - Page 9

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BTS 50090-1TMB

Manufacturer Part Number
BTS 50090-1TMB
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 50090-1TMB

Packages
PG-TO220-7
Channels
1.0
Ron @ Tj = 25°c
9.0 mOhm
Recommended Operating Voltage Min.
5.5 V
Recommended Operating Voltage Max.
24.0 V
Il(sc)
55.0 A
5
The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
Figure 4
switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses.
Figure 4
A high signal at the required external small signal transistor pulls the input pin to ground. A logic supply current I
is flowing and the power DMOS switches on with a dedicated slope, which is optimized in terms of EMC emission.
Figure 5
5.2
The on-state resistance
shows these dependencies for the typical on-state resistance. The voltage drop in reverse polarity mode is
described in
Datasheet
shows the input circuit of the BTS50090-1TMB. The current source to V
Power Stages
Input Circuit
Input Circuit
Switching a Load (resistive)
Output On-State Resistance
Section
6.3.
V
V
bIN
IN
R
DS(ON)
V
I
10%
depends on the supply voltage as well as the junction temperature
90%
50%
25%
IN
OUT
I
IN
IN
I
(dV/dt)
t
ON
ON
V
9
Z,IN
R
bb
V
bb
(dV/dt)
t
OFF
Smart High-Side Power Switch
OFF
t
t
bb
ensures that the device
BTS50090-1TMB
Rev. 1.0, 2008-02-11
Power Stages
T
SwitchOn.emf
j
.
Figure 6
Input.emf
IN

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