BTS 3028SDR Infineon Technologies, BTS 3028SDR Datasheet - Page 15

• Manufacturer Part Number: BTS 3028SDR
• Manufacturer: Infineon Technologies

Specifications of BTS 3028SDR

• Packages: PG-TO252-3
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 5.0 A
• Rds (on) (max): 30.0 mOhm
• Id(lim) (min): 18.0 A

Electrical Characteristics: Input and Power Stage (cont’d)
T
(unless otherwise specified)
Pos. Parameter
Switching (see
5.3.7 Turn-on time
5.3.8 Turn-off time
5.3.9 Slew rate on
5.3.10 Slew rate off
Inverse Diode
5.3.11 Inverse Diode forward voltage
1) Not subject to production test, calculated by
Datasheet
j
= -40 °C to +150 °C,
Figure 11
V
bat
for definition details)
= 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin
R
thJA
and
R
Symbol
t
t
-d
d
V
on
off
DS(on)
V
D,inverted
V
15
ds
ds
/d
/d
.
t
t
off
on
Min. Typ. Max.
–
–
–
–
–
–
–
Limit Values
50
60
50
80
120
80
0.7
0.7
0.7
0.7
-1.0
Smart low side power switch
100
120
120
120
200
200
1.5
1.5
1.5
1.5
-1.5
Unit Test Conditions
μs
μs
μs
μs
V/μs
V/μs
V
HITFET - BTS3028SDR
Input and Power Stage
V
T
T
1)
V
T
T
1)
V
1)
V
1)
I
V
D
J
J
J
J
bb
bb
bb
bb
IN
Rev. 1.0, 2009-12-06
V
V
V
V
=-51A
= -40 °C to 85 °C
= 150 °C
= -40 °C to 85 °C
= 150 °C
=13.5V,
=13.5V,
=13.5V,
=13.5V,
bb
bb
bb
bb
= 0 V
=28V,
=28V,
=28V,
=28V,
R
R
R
R
R
R
R
R
L
L
L
L
L
L
L
L
=4.7 Ω
=4.7 Ω
=4.7 Ω
=4.7 Ω
=10 Ω
=10 Ω
=10 Ω
=10 Ω