BTS 113A Infineon Technologies, BTS 113A Datasheet - Page 2

• Manufacturer Part Number: BTS 113A
• Manufacturer: Infineon Technologies

Specifications of BTS 113A

• Packages: P-TO220-3
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 2.2 A
• Rds (on) (max): 170.0 mOhm
• Id(lim) (min): -

Electrical Characteristics
at
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Dynamic Characteristics
Forward transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on time
V
R
Turn-off time
V
R
GS
GS
GS
GS
GS
DS
GS
GS
GS
CC
GS
CC
GS
T
j
= 0
=
= 0 V,
=
= 4.5 V
= 0
= 0
= 0
= 30 V,
= 50
= 30 V,
= 50
= 25 C, unless otherwise specified.
2
V
, I
, V
, V
, V
DS
20 V,
D
, I
I
DS
DS
DS
D
V
= 0.25 mA
, I
D
V
V
DS
= 25 V,
= 25 V,
= 25 V,
= 1 mA
D
t
GS
t
GS
V
R
on
off
= 60 V
= 5.8 A
DS
DS(on)max
, (
, (
= 5.0 V,
= 5.0 V,
t
t
= 0
on
off
f
f
f
=
=
= 1 MHz
= 1 MHz
= 1 MHz
,
t
t
d(on)
d(off)
I
T
T
T
T
D
I
I
j
j
j
j
D
D
= 5.8 A
= 25 C
= 125 C
= 25 C
= 150 C
+
+
= 3.0 A,
= 3.0 A,
t
t
r
f
)
)
Symbol
V
V
R
g
C
C
C
t
t
t
I
I
t
d(on)
r
d(off)
f
DSS
GSS
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
2
min.
60
1.6
–
–
–
–
–
4.5
–
–
–
–
–
–
–
TEMPFET
typ.
–
2.0
0.1
10
10
2
0.14
7.5
420
160
60
15
55
45
40
Values
max.
–
2.5
1.0
100
100
4
0.17
–
560
250
110
25
80
60
55
®
BTS 113 A
Unit
V
nA
S
pF
ns
A
A
19.02.04