BSD214SN Infineon Technologies, BSD214SN Datasheet - Page 3

• Manufacturer Part Number: BSD214SN
• Manufacturer: Infineon Technologies

Specifications of BSD214SN

• Package: SOT-363
• Vds (max): 20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 140.0 mOhm
• Rds (on) (max) (@2.5v): 250.0 mOhm

Rev 2.3
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
I
V
V
T
V
T
V
di
D
page 3
A
j
GS
DD
DD
GS
GS
R
=1.5 A, R
=25 °C
F
=25 °C
=10 V, I
/dt =100 A/µs
=0 V, V
=10 V, V
=10 V, I
=0 to 5 V
=0 V, I
F
F
DS
=1.5 A,
G
=1.5 A,
D
GS
=6 Ω
=1.5 A,
=10 V,
=4.5 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.24
typ.
107
4.1
7.8
6.8
1.4
0.2
0.8
2.2
0.8
8.4
1.7
46
6
-
-
max.
143
0.5
1.1
BSD214SN
62
9
6
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
nC
V
A
V
ns
nC
2011-07-13