2N7002DW Infineon Technologies, 2N7002DW Datasheet
2N7002DW
Specifications of 2N7002DW
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2N7002DW Summary of contents
Page 1
... =0 = /dt di /dt =200 A/µs, =150 °C T j,max V GS JESD22-A114 (HBM) =25 ° tot stg page 1 2N7002DW DS(on),max GS =4 0.3 PG-SOT363 HalogenFree Packing Yes Non Dry Value 0.30 0.24 1.2 1.3 6 ±20 class 0 (< ...
Page 2
... =150 ° = GSS =0. DS( |>2 DS(on)max g fs =0. page 2 2N7002DW Values Unit min. typ. max 250 K 1.5 2.1 2 0.1 µ Ω 0.2 0. 2011-06-16 ...
Page 3
... plateau I S =25 ° S,pulse = =0 =25 ° = =0 /dt =100 A/µ page 3 2N7002DW Values Unit min. typ. max 4 2 3 0.05 0 0.2 0.4 - 0.4 0 ...
Page 4
... A 4 Max. transient thermal impedance =f thJA p parameter µs 10 µ 100 µ 100 10 [V] DS page 4 2N7002DW ≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 single pulse 0. ...
Page 5
... V Rev.2.2 6 Typ. drain-source on resistance =f(I R DS(on) parameter Typ. forward transconductance =f 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0. 0.00 [V] GS page 5 2N7002DW ); T =25 ° 2.9 V 3 0.1 0.2 0.3 0.4 I [A] D =25 °C j 0.10 0.20 0.30 0.40 I [ 0.5 2011-06-16 ...
Page 6
... Forward characteristics of reverse diode =25°C =f parameter Ciss -1 10 Coss -2 10 Crss - [V] DS page 6 2N7002DW ); =250 µ typ 100 140 T [° 150 °C, 98% 150 °C 25 °C 25 °C, 98% 0.4 0.8 1 ...
Page 7
... V BR(DSS - Rev.2.2 14 Typ. gate charge =f gate parameter °C 7 100 ° [µs] 80 120 160 [°C] j page 7 2N7002DW ); I =0.5 A pulsed 0.1 0.2 0.3 0.4 [nC] Q gate 0.5 2011-06-16 ...
Page 8
... Package Outline: Footprint: Rev.2.2 SOT363 Packing: page 8 2N7002DW 2011-06-16 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 page 9 2N7002DW 2011-06-16 ...