BSL302SN Infineon Technologies, BSL302SN Datasheet
BSL302SN
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BSL302SN Summary of contents
Page 1
... =7 = /dt di /dt =200 A/µs, =150 °C T j,max V GS =25 ° tot stg JESD22-A114-HBM page 1 BSL302SN DS(on),max GS =4 7.1 D PG-TSOP Marking Lead Free Packing sPE Yes Non dry Value 7 ...
Page 2
... GSS DS( |>2 DS(on)max (single layer, 70 µm thick) copper area for drain page 2 BSL302SN Values Unit min. typ. max K 230 - - 62 1.2 1.70 2 μ 100 - - 100 mΩ ...
Page 3
... plateau I S =25 ° S,pulse = =7 =25 ° = =7 /dt =100 A/µ page 3 BSL302SN Values Unit min. typ. max. - 564 750 pF - 202 269 - 1.78 2. 1.2 1.8 - 4.4 6 ...
Page 4
... A 4 Max. transient thermal impedance =f(t Z thJA p parameter µs 10 µs 100 µ [V] DS page 4 BSL302SN ≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 ...
Page 5
... Typ. forward transconductance =f ° [V] GS page 5 BSL302SN ); T =25 ° 3 [A] D =25 ° [ 2011-06-03 ...
Page 6
... Forward characteristics of reverse diode =25°C =f parameter Ciss 0 10 Coss -1 10 Crss - [V] DS page 6 BSL302SN ); =30 µ typ 100 140 T [° °C 150 °C, 98% 150 °C 25 °C, 98% 0.4 0.8 1 ...
Page 7
... Gate charge waveforms s(th) Q g(th) 60 100 140 [°C] j page 7 BSL302SN ); I =7.1 A pulsed [nC] gate ate 2011-06-03 ...
Page 8
... Package Outline: 2.9 ±0.2 (2.25) (0.35 0.35 0.95 1.9 Footprint: 0.5 0.95 Remark: Wave soldering possible dep. on customers process conditions Dimensions in mm 1.07 TSOP6 B 0.1 MAX. +0.1 -0.05 0 Packaging: Pin 1 marking HLG09283 page 8 BSL302SN 1.1 MAX. A +0.1 0.15 -0.06 0 GPX09300 0.2 4 3.15 1.15 CPWG5899 2011-06-03 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user 1.07 page 9 BSL302SN 2011-06-03 ...