BSS126 Infineon Technologies, BSS126 Datasheet
BSS126
Specifications of BSS126
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BSS126 Summary of contents
Page 1
... A =0.016 = /dt di /dt =200 A/µs, =150 °C T j,max V GS =25 ° tot stg page 1 page 1 BSS126 600 V Ω 700 0.007 A PG-SOT-23 Marking SHs SHs bands bands 1) 1) SHs SHs GS(th) GS(th) Value Unit 0.021 A 0.017 0.085 6 kV/µs ± ...
Page 2
... DSS DS( |>2 DS(on)max g fs =0. µ GS(th page 2 page 2 BSS126 Values min. typ. max 250 600 - - -2.7 -2 100 320 700 - 280 500 , 0.008 0.017 - -1.8 - -1.6 -1. ...
Page 3
... =- plateau I S =25 ° S,pulse =- =16 mA =25 ° =300 V, I =0. /dt =100 A/µ page 3 page 3 BSS126 Values Unit min. typ. max 2.4 3.2 - 1.0 1.5 - 6.1 9 9.7 14 115 170 - 0.05 0. 1.2 1.8 - 1.4 2.1 - 0.10 ...
Page 4
... Max. transient thermal impedance =f thJA p parameter µs 100 µ 0 0.2 DC 0.1 0.05 0.02 0. page 4 page 4 BSS126 ≥ 120 120 T T [°C] [° single pulse - [s] p 2012-03-14 2012-03-14 ...
Page 5
... Typ. forward transconductance =f =25 ° 0.025 0.02 0.015 0.01 0.005 0.000 page 5 page 5 BSS126 =25 °C j -0 0.1 V0 0.1 V0.2 V 0.5 V 0.5 V -0.1 V -0.1 V 0.01 0.01 0.02 0.02 0.03 0. [A] [ 0.005 0.010 0.015 I [A] D 2012-03-14 2012-03- ...
Page 6
... J 1 0.1 -1.5 -1 page 6 page µ typ typ -20 - 100 100 T T [°C] [° =- MHz [V] DS BSS126 140 140 180 180 Ciss Coss Crss 30 2012-03-14 2012-03-14 ...
Page 7
... V GS parameter °C, 98% 25 °C, 98 1.5 1 2.5 2.5 100 140 180 page 7 page =0.1 A pulsed gate D DD 0.2 VDS(max) 0.2 VDS(max) 0.5 VDS(max) 0.5 VDS(max 0.4 0.4 0.8 0.8 1.2 1 [nC] [nC] gate gate BSS126 0.8 VDS(max) 0.8 VDS(max) 1.6 1.6 2012-03-14 2012-03-14 ...
Page 8
... Package Outline: Footprint: Dimensions in mm Rev. 2.1 Rev. 2.1 Packaging: page 8 page 8 BSS126 2012-03-14 2012-03-14 ...
Page 9
... Rev. 2.1 Rev. 2.1 page 9 page 9 BSS126 2012-03-14 2012-03-14 ...