BSP170P Infineon Technologies, BSP170P Datasheet

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BSP170P

Manufacturer Part Number
BSP170P
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP170P

Package
SOT-223
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
300.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP170P
Manufacturer:
INF
Quantity:
3 000
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BSP170P
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSP170P H6327
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Quantity:
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Part Number:
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Rev 2.52
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, periodic limited by
T
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
• Qualified according to AEC Q101
Type
BSP170P
jmax
®
Small-Signal-Transistor
Package
PG-SOT223
j
=25 °C, unless otherwise specified
Tape and reel information
L6327: 1000pcs/reel
Symbol Conditions
I
I
E
E
dv /dt
V
P
T
D
D,pulse
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
di /dt =-200 A/µs,
T
T
JESD22-C101 (HBM)
D
D
page 1
A
A
A
j,max
A
=1.9 A, R
=1.9 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
GS
Product Summary
V
R
I
=48 V,
=25 Ω
D
DS
DS(on),max
Marking
BSP170P Yes
1A (250V to 500V)
Lead free
steady state
-55 ... 150
55/150/56
PG-SOT223
260 °C
Value
0.18
-1.9
-1.5
-7.6
±20
1.8
70
-6
Packing
Non Dry
BSP170P
-1.9
0.3
-60
Unit
A
mJ
kV/µs
V
W
°C
V
A
2008-03-26

Related parts for BSP170P

BSP170P Summary of contents

Page 1

... Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 Rev 2.52 Product Summary DS(on),max I D Tape and reel information Marking L6327: 1000pcs/reel BSP170P Yes Symbol Conditions I T =25 ° =70 ° =25 °C D,pulse A =25 Ω ...

Page 2

... GSS =- =-1.9 A DS(on |>2 DS(on)max =-1 (one layer, 70µm thick) copper area for drain connection. PCB page 2 BSP170P Values Unit min. typ. max K 110 -0.1 -1 µA - -10 -100 ...

Page 3

... plateau =25 ° S,pulse =-1 =25 ° = =| /dt =100 A/µ page 3 BSP170P Values Unit min. typ. max. - 328 410 pF - 105 135 - 138 - -1.4 -1 -4.9 -7.4 - ...

Page 4

... A 4 Max. transient thermal impedance Z =f(t thJA p parameter µs 100 µ 100 100 10 [V] DS page 4 BSP170P |≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - ...

Page 5

... V 300 200 -4V 100 [ Typ. forward transconductance g =f 3.5 3 2.5 2 1.5 1 0.5 125 °C 25 ° [V] GS page 5 BSP170P ); T =25 ° -4 -5 - [A] D =25 °C j 0 [A] D 2.5 2008-03-26 ...

Page 6

... Forward characteristics of reverse diode I =f parameter Ciss 0 10 Coss Crss - [V] DS page 6 BSP170P ); =-250 µ max. typ. min. - 100 T [° 150 °C, typ 25 °C, 98% 150 °C, 98% 25 °C, typ 0 ...

Page 7

... T Rev 2.52 14 Typ. gate charge V =f(Q GS parameter °C 8 100 °C 125 ° [µ 100 140 [°C] j page 7 BSP170P ); I =-1.9 A pulsed gate [nC] gate 15 2008-03-26 ...

Page 8

... Package Outline SOT-223: Outline Footprint Operating and storage temperature Dimensions in mm Rev 2.52 Packaging Tape page 8 BSP170P 2008-03-26 ...

Page 9

... Rev 2.52 page 9 BSP170P 2008-03-26 ...

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