BSP317P Infineon Technologies, BSP317P Datasheet
BSP317P
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BSP317P Summary of contents
Page 1
... Page 1 Product Summary DS(on PG-SOT223 Drain 4 pin 2/4 Gate pin1 Source pin 3 Marking Packaging BSP317P BSP317P Non dry Value -0.43 -0.34 -1.72 6 ±20 GS 1.8 tot T -55... +150 stg 55/150/56 Class 1b BSP317P -250 V Ω 4 -0. VPS05163 Unit A kV/µ °C 20110419 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.2 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSP317P Values Unit min. typ. max K 115 - 48 70 Values Unit min. typ. max. -250 - - ...
Page 3
... I =-0.43A -10V GS V (plateau) V =-200V, I =-0.43A =25° =0, I =-0.43A =-125V /dt=100A/µ Page 3 BSP317P Values Unit min. typ. max. 0.38 0. 210 262 13.4 16.7 - 5.7 8 11.1 16.6 - 254 381 - 67 100 - -0.5 -0. -5.2 - -11 ...
Page 4
... V - Page 4 | ≥ 10V GS BSP 317 P -0.5 A -0.4 -0.3 -0.2 -0 100 = BSP 317 single pulse - BSP317P 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 20110419 ...
Page 5
... Typ. drain-source on resistance R DS(on) parameter 3 Typ. forward transconductance | f(I DS(on)max fs parameter =25°C 2 2.4 2 Page =25° Ω 0.2 0.4 0.6 0 1.4 S 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.2 0.4 0.6 0.8 1 BSP317P 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V 1 1 20110419 ...
Page 6
... Page 2.4 V 98% 2 1.8 typ. 1.6 1.4 1 0.8 0.6 0.4 0.2 0 -60 - BSP 317 °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 BSP317P 100 °C 160 20110419 ...
Page 7
... Rev.2.2 14 Drain-source breakdown voltage V (BR)DSS = 25°C j -300 V -285 -280 -275 -270 -265 -260 -255 -250 -245 -240 -235 -230 -225 - Page 7 BSP317P = BSP 317 P - 100 20110419 °C 180 T j ...
Page 8
... Rev.2.2 Page 8 BSP317P 20110419 ...