IGC10T60Q Infineon Technologies, IGC10T60Q Datasheet

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IGC10T60Q

Manufacturer Part Number
IGC10T60Q
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of IGC10T60Q

Technology
High Speed IGBT 3
Vds (max)
600.0 V
Ic (max)
20.0 A
Vce(sat) (max)
2.32 V
Vge(th) (min)
4.2 V
High Speed IGBT3 Chip
Features:
Mechanical Parameters
Die size
Emitter pad size
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Storage environment
1 )
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7548C, Rev 1.0, 30.01.2012
collector
600V Trench & Field Stop technology
high speed switching series third
generation
low V
low EMI
low turn-off losses
positive temperature coefficient
qualified according to JEDEC for target
applications
IGC10T60Q
Chip Type
CE(sat)
1 )
for original and
sealed MBB bags
for open MBB bags
600V
V
CE
20A
I
Cn
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
(temperature budget: 290°C for 1min. or 260°C for 1.5min.)
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
Recommended for:
Applications:
3.19 x 3.21mm
Ambient atmosphere air, Temperature 17°C – 25°C,
Electrically conductive epoxy glue and soft solder
discrete components and
modules
uninterruptible power supplies
welding converters
converters with high switching
frequency
Die Size
See chip drawing
0.361 x 0.513
 0.65mm ; max 1.2mm
3.19 x 3.21
2
10.24
3200 nm AlSiCu
150
Ni Ag –system
70
Al, <500µm
Photoimide
< 6 month
1452
IGC10T60Q
sawn on foil
Package
G
mm
mm
µm
C
E
2

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IGC10T60Q Summary of contents

Page 1

... Electrically conductive epoxy glue and soft solder (temperature budget: 290°C for 1min. or 260°C for 1.5min.)  0.65mm ; max 1.2mm Ambient atmosphere air, Temperature 17°C – 25°C, Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month IGC10T60Q G Package sawn on foil 70 1452 Photoimide Ni Ag – ...

Page 2

... V CES = GES Symbol Conditions V =15V CEsat IGC10T60Q Value 600 20 -40 ... +175 5 Value min. typ 600 C =20A 1.48 1. 4.2 5 =0V GE =20V GE none Value min. ...

Page 3

... Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. This chip data sheet refers to the device data sheet Edited by INFINEON Technologies, IFAG IPC TD VLS, L7548C, Rev 1.0, 30.01.2012 IGC10T60Q IKW20N60H3 Rev 1.2 ...

Page 4

... Chip Drawing Emitter G = Gate Edited by INFINEON Technologies, IFAG IPC TD VLS, L7548C, Rev 1.0, 30.01.2012 IGC10T60Q E ...

Page 5

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, IFAG IPC TD VLS, L7548C, Rev 1.0, 30.01.2012 Subjects (major changes since last revision) IGC10T60Q Date ...

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