BC850C Infineon Technologies, BC850C Datasheet - Page 3

• Manufacturer Part Number: BC850C
• Manufacturer: Infineon Technologies

Specifications of BC850C

• Packages: SOT23
• Polarity: NPN
• Vceo (max): 45.0 V
• Vcbo (max): 50.0 V
• Ic(max): 100.0 mA
• Icm (max): 200.0 mA

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
DC current gain
I
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
Base-emitter voltage
I
I
1
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
= 0 , I
= 10 mA, I
= 10 mA, I
= 10 µA, I
= 10 µA, I
= 10 µA, V
= 10 µA, V
= 10 µA, V
= 2 mA, V
= 2 mA, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
= 45 V, I
= 30 V, I
C
= 10 µA
E
E
CE
CE
CE
CE
B
B
B
B
E
E
CE
CE
CE
CE
= 0 , BC847..., BC850...
= 0 , BC848..., BC849...
B
B
= 0 , BC847..., BC850...
= 0 , BC848..., BC849...
= 0.5 mA
= 0.5 mA
= 0
= 0 , T
1)
= 5 V, h
= 5 V, h
= 5 V, h
= 5 V
= 5 mA
= 5 mA
= 5 V, h
= 5 V, h
= 5 V, h
= 5 V
1)
A
= 150 °C
FE
FE
FE
FE
FE
FE
-grp.A
-grp.B
-grp.C
-grp.A
-grp.B
-grp.C
1)
A
= 25°C, unless otherwise specified
1)
3
Symbol
V
V
V
I
h
V
V
V
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
BE(ON)
min.
110
200
420
580
45
30
50
30
-
-
-
-
-
-
-
-
-
-
-
Values
0.015
BC847...-BC850...
140
250
480
180
290
520
200
700
900
660
typ.
90
6
5
-
-
-
-
-
max.
220
450
800
250
600
700
770
2011-09-09
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
-
mV