SMBT3904 / MMBT3904 Infineon Technologies, SMBT3904 / MMBT3904 Datasheet

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SMBT3904 / MMBT3904

Manufacturer Part Number
SMBT3904 / MMBT3904
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of SMBT3904 / MMBT3904

Packages
SOT23
Polarity
NPN
Vceo (max)
40.0 V
Ptot (max)
-
Hfe (min)
100.0 - 300.0
Ic
10.0 mA
NPN Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3904S:
• Complementary types: SMBT3906... MMBT3906
• SMBT3904S: For orientation in reel
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
SMBT3904/MMBT3904
SMBT3904S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
SMBT3904/MMBT3904
SMBT3904S
For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Two (galvanic) internal isolated transistors
S
S
with good matching in one package
see package information below
≤ 71°C, SOT23, SMBT3904
≤ 115°C, SOT363, SMBT3904S
1)
Marking
s1A
s1A
1=B
1=E1
2=E
2=B1
1
Pin Configuration
Symbol
V
V
V
I
P
T
T
Symbol
R
C
3=C
3=C2
j
stg
CEO
CBO
EBO
tot
thJS
-
4=E2
SMBT3904...MMBT3904
-
5=B2
-65 ... 150
Value
Value
≤ 240
≤ 140
330
250
200
150
40
60
6
-
6=C1
Package
SOT23
SOT363
2011-12-14
Unit
V
mA
mV
°C
Unit
K/W

Related parts for SMBT3904 / MMBT3904

SMBT3904 / MMBT3904 Summary of contents

Page 1

NPN Silicon Switching Transistors • High DC current gain: 0 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Emitter-base breakdown voltage µ ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...

Page 4

Test circuits Delay and rise time 300 +10 -0.5 V <1.0 ns Storage and fall time 10 t < < 500 +10 -9.1 V <1.0 ns ...

Page 5

DC current gain normalized 125 - Collector-base capacitance C Emitter-base capacitance ...

Page 6

Total power dissipation P SMBT3904S 300 mW 250 225 200 175 150 125 100 Permissible Pulse Load = ƒ( totmax totDC p SMBT3904/MMBT3904 tot ...

Page 7

Permissible Pulse Load = ƒ( totmax totDC p SMBT3904S 0.005 0.01 0.02 0.05 0.1 0.2 0 ...

Page 8

Rise time 125 EHP00764 ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 10

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 11

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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