BB659C Infineon Technologies, BB659C Datasheet - Page 3

• Manufacturer Part Number: BB659C
• Manufacturer: Infineon Technologies

Specifications of BB659C

• Packages: SCD80
• Configuration: Single
• If (max): 20.0 mA
• Ct1 (typ): 39.0 pF
• Ct2 (typ): 30.2 pF
• Ct / C T: 15.3(1/28V)

Diode capacitance C
f = 1MHz
Reverse current I
V
R
= 28V
pF
10
pA
10
10
10
40
30
25
20
15
10
5
0
-30
3
2
1
0
0
-10
5
10
10
R
= ƒ ( T
T
30
15
= ƒ (V
A
)
50
20
R
)
70
V
°C
V
T
R
A
100
30
3
Temperature coefficient of the diode
capacitance T
Reverse current I
T
A
1/°C
= Parameter
10
10
10
10
10
pA
10
10
10
-3
-4
-5
-1
3
2
1
0
10
10
0
0
Cc
= ƒ ( V
R
= ƒ ( V
BB639C/BB659C...
10
10
R
)
1
1
R
)
85°C
25°C
2011-06-15
V
V
V
V
R
R
10
10
2
2