BGA612 Infineon Technologies, BGA612 Datasheet - Page 5

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BGA612

Manufacturer Part Number
BGA612
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BGA612

Packages
SOT343
Frequency (f)
DC-6 GHz
Gain (typ)
16.0 dB
F (typ)
2.35 dB
P-1db (in)
+7
I (typ)
20.0 mA

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Maximum Ratings
Table 1
Parameter
Device voltage
Device current
Current into pin In
Input power
Total power dissipation,
Junction temperature
Ambient temperature range
Storage temperature range
ESD capability all pins (HBM: JESD22-A114) V
1) Valid for
2)
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Parameter
Junction - soldering point
1) For calculation of
2
Electrical characteristics at
V
Table 3
Parameter
Insertion power gain
Noise figure (
Output power at 1 dB gain
compression
Output third order intercept point
Input return loss
Output return loss
Total device current
Data Sheet
CC
T
= 5 V,
S
is measured on the ground lead at the soldering point
R
Z
1)
Bias
S
Maximum ratings
Thermal resistance
Electrical Characteristics
Electrical Characteristics
Z
=
S
Z
= 135 Ω, Frequency = 2 GHz, unless otherwise specified
= 50 Ω)
L
= 50 Ω,
R
thJA
please refer to Application Note Thermal Resistance
T
1)
S
V
CC
< 105 °C
T
A
= 5 V,
= 25 °C (measured in test circuit specified in
R
2)
Bias
Symbol
|S
F
P
OIP
RL
RL
I
= 135 Ω
D
Symbol
R
50Ω
-1dB
21
thJS
in
out
|
2
3
Symbol
V
I
I
P
P
T
T
T
D
in
J
A
STG
D
in
tot
ESD
Min.
5
Typ.
18.0
17.5
16.3
1.8
2.0
2.1
7
17
17
17
20
Values
2.8
80
0.7
10
225
150
-65... 150
-65... 150
1000
Limit Value
Value
200
Max.
Figure
2)
Electrical Characteristics
Unit
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
Unit
V
mA
mA
dBm
mW
°C
°C
°C
V
Unit
K/W
Rev. 2.1, 2011-09-02
Note /
Test Condition
f
f
f
f
f
f
= 0.1 GHz
= 1.0 GHz
= 2.0 GHz
= 0.1 GHz
= 1.0 GHz
= 2.0 GHz
BGA612

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