BFP420F Infineon Technologies, BFP420F Datasheet - Page 7

• Manufacturer Part Number: BFP420F
• Manufacturer: Infineon Technologies

Specifications of BFP420F

• Packages: TSFP-4-1
• Vceo (max): 4.5 V
• Ic(max): 35.0 mA
• Nfmin (typ): 1.1 dB
• Gmax (typ): 19.5 dB
• Oip3: 24.0 dBm

Low Noise Silicon Bipolar RF Transistor
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Applications
As Low Noise Amplifier (LNA) in
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As discrete active mixer in RF Frontends
As active device in discretes oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
BFP420F
Data Sheet
Low noise high gain silicon bipolar RF transistor
Based on Infineon´s reliable very high volume 25 GHz
silicon bipolar technology
0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA
16 dB maximum gain (
28 dBm
16.5 dBm
Popular in discrete oscillators
Thin, small, flat, Pb-free (RoHS compliant) and Hal-free
(“green”) package with visible leads
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
Multimedia applications such as mobile/portable TV, CATV, FM Radio
ISM applications like RKE, AMR and Zigbee
OIP
Features
OP
3
TSFP-4-1
1dB
typical at 2.4 GHz, 4 V, 40 mA
typical at 2.4 GHz, 4 V, 40 mA
G
ma
) typical at 2.4 GHz, 3 V, 15 mA
1 = B
2 = E
Pin Configuration
7
3 = C
TSFP-4-1
4 = E
4
3
Revision 1.0, 2011-09-05
Marking
AMs
1
BFP420F
2