BFR92PE6327 Infineon Technologies AG, BFR92PE6327 Datasheet
BFR92PE6327
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BFR92PE6327 Summary of contents
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NPN Silicon RF Transistor For broadband amplifiers GHz and fast non-saturated switches at collector currents from 0 Complementary type: BFT 92 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type ...
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Electrical Characteristics at T Parameter DC characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...
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... XTI = 3 - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes ...
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Total power dissipation P 300 mW 200 150 100 Permissible Pulse Load K 0.5 0.2 0.1 0.05 0.02 0.01 0.005 ...
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Collector-base capacitance 1MHz 1.3 pF 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 Power Gain f 0.9GHz V = Parameter CE ...
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Power Gain f f Parameter 16 I =15mA Power Gain ...