BSC016N04LSG Infineon Technologies AG, BSC016N04LSG Datasheet

Page 1

OptiMOS ® 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel • Logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...

Page 2

Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot C 160 140 120 100 Safe operating area I =f =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter 600 5 V 500 10 V 400 300 200 100 Typ. transfer characteristics I =f |>2|I |R ...

Page 6

Drain-source on-state resistance =10 V DS(on 2 1.5 1 0.5 0 -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics parameter: T j(start) 100 125 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.0 PG-TDSON-8 page 8 BSC016N04LS G 2007-12-14 ...

Page 9

Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.0 page 9 BSC016N04LS G 2007-12-14 ...

Page 10

... Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, ...