BSS88 Infineon Technologies AG, BSS88 Datasheet

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BSS88

Manufacturer Part Number
BSS88
Description
Manufacturer
Infineon Technologies AG
Datasheet
SIPMOS
Data Sheet
• N channel
• Enhancement mode
• Logic Level
• V
Type
BSS 88
Type
BSS 88
BSS 88
BSS 88
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Continuous drain current
T
DC drain current, pulsed
T
Power dissipation
T
A
A
A
GS
GS(th)
= 25 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
®
= 0.8...2.0V
Small-Signal Transistor
V
240 V
Ordering Code
Q62702-S287
Q62702-S303
Q62702-S576
DS
I
0.25 A
D
R
8
Tape and Reel Information
E6288
E6296
E6325
DS(on)
1
Symbol
V
V
V
I
I
P
D
Dpuls
DS
DGR
GS
tot
Package
TO-92
Pin 1
G
Class 1
Values
0.25
240
240
Marking
SS88
1
1
20
Pin 2
D
BSS 88
Unit
V
A
W
Pin 3
05.99
S

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BSS88 Summary of contents

Page 1

SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • 0.8...2.0V GS(th) Type V DS BSS 88 240 V Type Ordering Code BSS 88 Q62702-S287 BSS 88 Q62702-S303 BSS 88 Q62702-S576 Maximum Ratings Parameter ...

Page 2

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V = ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance 0. DS(on)max, D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C A Inverse diode direct current,pulsed ˚C A Inverse diode forward voltage 0 ...

Page 5

Power dissipation tot A 1.2 W 1.0 P tot 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Safe operating area I = parameter : ...

Page 6

Typ. output characteristics parameter µ tot 0. 0.45 0.40 0.35 0.30 0.25 0.20 0.15 ...

Page 7

Drain-source on-resistance (on) j parameter 0. 4 (on 98 typ -60 - ...

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