BUZ102S Infineon Technologies AG, BUZ102S Datasheet
BUZ102S
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BUZ102S Summary of contents
Page 1
... Avalanche rated • rated • 175 ˚C operating temperature Type Package BUZ102S P-TO220-3-1 Q67040-S4011-A2 BUZ102S E3045A P-TO263-3-2 BUZ102S E3045 P-TO263-3-2 Q67040-S4011-A5 Maximum Ratings ˚C unless unless specified Parameter Continuous drain current ˚ 100 ˚C ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics ˚C, unless otherwise ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Transconductance ≥ DS(on)max D Input capacitance MHz ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Gate to drain charge ...
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... Data Book Drain current parameter: V BUZ102S Transient thermal impedance thJC parameter : BUZ102S 19.0µ 100 µ ...
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... V 5.0 0.000 V DS Typ. forward transconductance = parameter BUZ 102S = BUZ102S [ 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9 25˚ ...
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... Coss Crss 0 BUZ 102S = µ -60 - 100 140 ˚ µ BUZ102S ˚C typ 175 ˚C typ ˚C (98 175 ˚C (98 0.4 0.8 1.2 1.6 2.0 max typ min 200 2.4 3 ...
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... Data Book Typ. gate charge ) parameter 120 140 ˚C 180 T j 100 140 ˚C 200 BUZ 102S ) Gate = puls BUZ102S V 0,2 0,8 DS max max Gate 05.99 ...