BUZ111S Infineon Technologies AG, BUZ111S Datasheet
BUZ111S
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BUZ111S Summary of contents
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... N channel Enhancement mode Avalanche rated rated 175˚C operating temperature Type Package BUZ111S P-TO220-3-1 Q67040-S4003-A2 BUZ111S E3045A P-TO263-3-2 BUZ111S E3045 P-TO263-3-2 Q67040-S4003-A5 Maximum Ratings ˚C, unless otherwise specified Parameter Continuous drain current ˚ 100 ˚C ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics ˚C, unless otherwise ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Gate to drain charge ...
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... Data Sheet Drain current parameter: V BUZ111S Transient thermal impedance thJC parameter : BUZ111S 29.0µ 100 µ ...
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... Typ. transfer characteristics I parameter µ DS(on) max Data Sheet Typ. drain-source-on-resistance DS(on) parameter: V BUZ111S 0.026 V GS [V] 0.022 a 4.0 b 4.5 0.020 e c 5.0 0.018 d 5.5 e 6.0 0.016 f 6.5 d 0.014 g 7.0 h 7.5 0.012 i 8.0 j 9.0 0.010 ...
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... Coss Crss 0 BUZ 111S = 240 µ 140 ˚C -60 - 100 ) µ BUZ111S ˚C typ 175 ˚C typ ˚C (98 175 ˚C (98 0.4 0.8 1.2 1.6 2.0 max typ min 200 2.4 3 ...
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... Data Sheet Typ. gate charge ) parameter ˚C 120 140 180 T j 140 ˚C 100 200 BUZ 111S ) Gate = puls BUZ111S V 0,2 0,8 DS max 100 120 140 V DS max nC 180 Q Gate 05.99 ...