BUZ357 Infineon Technologies AG, BUZ357 Datasheet
BUZ357
Available stocks
Related parts for BUZ357
BUZ357 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 357 1000 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
Page 2
Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
Page 3
Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
Page 4
Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
Page 5
Power dissipation tot C 130 W 110 P tot 100 Safe operating area ...
Page 6
Typ. output characteristics parameter µ 125W tot ...
Page 7
Drain-source on-resistance (on) j parameter 3 (on 98% 3 typ -60 - ...
Page 8
Avalanche energy parameter 5 900 mJ E 700 AS 600 500 400 300 200 100 0 20 ...