IPP16CN10N Infineon Technologies AG, IPP16CN10N Datasheet
IPP16CN10N
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IPP16CN10N Summary of contents
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OptiMOS ® 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient (TO220, TO262, TO263) Thermal resistance, junction - ambient (TO252) Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 5) Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage ...
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Power dissipation P =f(T ) tot C 120 100 100 T [° Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter 250 10 V 200 150 6.5 V 100 5 4 ...
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Drain-source on-state resistance =10 V DS(on -60 - [° Typ. capacitances C =f(V ...
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Avalanche characteristics parameter: T j(start) 100 150 ° [µ Drain-source breakdown voltage V =f BR(DSS 100 95 90 ...
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PG-TO220-3: Outline Rev. 1.01 IPB16CNE8N G IPI16CNE8N G page 8 IPD16CNE8N G IPP16CNE8N G 2006-02-16 ...
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Rev. 1.01 IPB16CNE8N G IPI16CNE8N G page 9 IPD16CNE8N G IPP16CNE8N G 2006-02-16 ...
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Rev. 1.01 IPB16CNE8N G IPI16CNE8N G page 10 IPD16CNE8N G IPP16CNE8N G 2006-02-16 ...
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PG-TO252-3: Outline Rev. 1.01 IPB16CNE8N G IPI16CNE8N G page 11 IPD16CNE8N G IPP16CNE8N G 2006-02-16 ...
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... Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values ...