MRF5003 Freescale Semiconductor, Inc, MRF5003 Datasheet
MRF5003
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MRF5003 Summary of contents
Page 1
... The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment ...
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... DS = 12.5 Vdc 1.0 MHz) Reverse Transfer Capacitance ( 12.5 Vdc 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common–Source Amplifier Power Gain ( 7.5 Vdc, P out = 3 mA) Drain Efficiency ( 7.5 Vdc, P out = 3 mA) MRF5003 2 Symbol Min V (BR)DSS 36 I DSS — I GSS — ...
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... MHz 7 400 500 0 100 Figure 3. Output Power versus Input Power V DD C15 RF OUTPUT Z9 Z10 Z11 Z12 400 MHz 470 MHz 520 MHz 12 200 300 400 500 INPUT POWER (MILLIWATTS) MRF5003 3 ...
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... Figure 6. Output Power versus Supply Voltage 1000 800 600 400 200 GATE–SOURCE VOLTAGE (VOLTS) Figure 8. Drain Current versus Gate Voltage (Typical Device Shown) MRF5003 4 TYPICAL CHARACTERISTICS 300 470 MHz 200 mW 6 100 ...
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... Conjugate of the load impedance at given output Ω 100 Safe Operating Area 7 mA, P out = 3 Ohms Ohms 2.8 – j9.2 3.6 – j1.7 2.7 – j8.5 3.3 – j1.5 2.5 – j7.8 2.7 – j1.1 2.0 – j7.2 2.5 – j0.8 1.3 – j6.5 2.4 – j0.5 power, voltage, frequency, and η D > 50%. MRF5003 5 ...
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... MHz | 0.80 – 125 100 0.76 – 150 200 0.76 – 164 300 0.77 – 169 400 0.79 – 172 500 0.80 – 174 700 0.83 – 178 850 0.85 – 179 1000 0.87 – 177 MRF5003 φ 10.8 117 0.07 6.0 96 0.08 3.0 75 0.08 1.9 61 0.07 1.3 50 0.06 0.99 41 0.05 0.61 28 0.03 0.45 21 0.02 ...
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... Input/Output Connectors — SMA OUTPUT Z10 Z11 Z12 Z13 0.1 µF, 100 mil Chip 160 pF, 100 mil Chip 43 Ω, 0.1 W Chip Resistor 1000 Ω, 0.1 W Chip Resistor 10 kΩ Potentiometer 3000 Ω, 0.1 W Chip Resistor 5 Turns, 0.126 ID, #20 AWG Enamel See Photomaster 1N4734 Motorola Zener MRF5003 7 ...
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... INPUT POWER (MILLIWATTS) Figure 14. Output Power versus Input Power Figure 16. Output Power versus Gate Voltage MRF5003 400 MHz 470 MHz 7 1000 1200 400 410 420 Figure 15 ...
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... See Figure 8 for a typical plot of drain current ver- sus gate voltage. RF power FETs operate optimally with a quiescent drain current ( whose value is application de- pendent. The MRF5003 was characterized mA, which is the suggested value of bias current for typical ap- plications. For special applications such as linear amplifica- tion may have to be selected to optimize the critical parameters ...
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... AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for the MRF5003. For exam- ples see Motorola Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors”. Both small–signal S–parameters and large–signal impedances are provided. While the S–parameters will not produce an exact design solution for high power operation, they do yield a good first approximation ...