SDA2506-5 Infineon Technologies AG, SDA2506-5 Datasheet
SDA2506-5
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SDA2506-5 Summary of contents
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Nonvolatile Memory 1-Kbit E Preliminary Data Features Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology 128 8-bit organization Supply voltage 5 V Three lines between control processor and E data transfer and chip control Serial data bus (eight data bits, ...
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SDA 2506-5 Circuit Description Data Transfer and Chip Control Three lines, each with several functions, are necessary for overall data transfer between the control 2 processor and the E PROM: a) Data line D – bidirectional serial data transfer – ...
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Reprogram (see figure 2a, 2b and 3) A complete reprogramming operation consists of an erase operation followed by a write operation. During erase, all bits of the selected word are set to a uniform 1 state, and during write, 0 ...
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SDA 2506-5 Pin Configuration (top view) Pin Definitions and Functions Pin No. Symbol N. Semiconductor Group Function Ground for control-world input ...
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Block Diagram Semiconductor Group 19 SDA 2506-5 ...
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SDA 2506-5 Absolute Maximum Ratings Parameter Supply voltage Input voltage Power dissipation Storage temperature Thermal resistance (system-air) Operating Range Supply voltage Ambient temperature Semiconductor Group Symbol Limit Values min. V – 0 – 0 ...
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Characteristics ˚C A Parameter Supply voltage Supply current Inputs Input voltage (D, CE) Input voltage (D, CE) Input current (D, CE) Data Output D (open drain) L-output current H-output current Clock Pulse High duration Low duration Time ...
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SDA 2506-5 Test Circuit Application Circuit Semiconductor Group 22 ...
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Read Reprogramming Erase and Write Semiconductor Group 23 SDA 2506-5 ...
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SDA 2506-5 Reprogram/Erase Reprogram/Write Semiconductor Group 24 ...