M29F400B-90N1 STMicroelectronics, M29F400B-90N1 Datasheet
M29F400B-90N1
Manufacturer Part Number
M29F400B-90N1
Description
Manufacturer
STMicroelectronics
Datasheet
1.M29F400T-90N1.pdf
(34 pages)
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DESCRIPTION
The M29F400 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte or Word-
by-Word basis using only a single 5V V
For Program and Erase operations the necessary
high voltages are generated internally. The device
can also be programmed in standard program-
mers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
November 1999
This is information on a product stil l in production but not recommended for new designs.
M29F400T and M29F400B are replaced
respectively by the M29F400BT and
M29F400BB
5V 10% SUPPLY VOLTAGE for PROGRAM,
ERASE and READ OPERATIONS
FAST ACCESS TIME: 55ns
FAST PROGRAMMING TIME
– 10 s by Byte / 16 s by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29F400T: 00D5h
– Device Code, M29F400B: 00D6h
Erase Suspend
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
CC
supply.
Figure 1. Logic Diagram
Single Supply Flash Memory
A0-A17
TSOP48 (N)
RP
12 x 20 mm
W
G
E
18
V CC
M29F400T
M29F400B
V SS
M29F400B
NOT FOR NEW DESIGN
M29F400T
44
15
SO44 (M)
1
DQ0-DQ14
DQ15A–1
BYTE
RB
AI01726B
1/34
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