m29f400b-120n6tr STMicroelectronics, m29f400b-120n6tr Datasheet

m29f400b-120n6tr

Manufacturer Part Number

m29f400b-120n6tr

Description

4 Mbit 512kb X8 Or 256kb X16, Boot Block Single Supply Flash Memory

Manufacturer

STMicroelectronics

Datasheet

1.M29F400B-120N6TR.pdf (40 pages)

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Features

March 2007

Single 5 V ± 10% supply voltage for program,

erase and read operations

Access time: 45 ns

Programming time

– 8 µs per Byte/Word typical

11 memory blocks

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 8 Main Blocks

Program/erase controller

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

Erase Suspend and Resume modes

– Read and Program another Block during

Unlock Bypass Program command

– Faster Production/Batch Programming

Temporary block unprotection mode

Low power consumption

– Standby and Automatic Standby

100,000 program/erase cycles per block

20-year data retention

– Defectivity below 1 ppm/year

algorithm

Erase Suspend

4 Mbit (512Kb x8 or 256Kb x16, Boot Block)

Rev 5

Electronic signature

– Manufacturer Code: 0020h

– Top Device Code M29F400BT: 00D5h

– Bottom Device Code M29F400BB: 00D6h

ECOPACK

single supply Flash memory

packages available

TSOP48 (N)

12 x 20mm

SO44 (M)

M29F400BB

M29F400BT

www.st.com

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