SPB80N06S209 Infineon Technologies, SPB80N06S209 Datasheet

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SPB80N06S209

Manufacturer Part Number
SPB80N06S209
Description
OptiMOS Power-Transistor
Manufacturer
Infineon Technologies
Datasheet

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Part Number
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Part Number:
SPB80N06S209
Manufacturer:
INF
Quantity:
7 171
Feature


 


OptiMOS
Type
SPP80N06S2-09
SPB80N06S2-09
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
C
1 75°C operating temperature
N-Channel
Enhancement mode
Avalanche rated
dv/dt rated
=80A, V
=80 A , V
=100°C
=25°C
=25°C
= 25 °C,
DS
DD
1)
=44V, di/dt=200A/µs, T

=25V, R
= = = =
Power-Transistor
GS
=25
Package
P-TO220-3-1 Q67060-S6025
P-TO263-3-2 Q67060-S6027

j
= 25 °C, unless otherwise specified
jmax
=175°C
Ordering Code
Preliminary data
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
stg
P-TO263-3-2
Marking
2N0609
2N0609
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
DS
DS(on)
±20
320
370
190
80
80
SPB80N06S2-09
SPP80N06S2-09
6
P-TO220-3-1
2001-04-24
9.1
55
80
Unit
A
mJ
kV/µs
V
W
°C
V
m
A


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SPB80N06S209 Summary of contents

Page 1

OptiMOS Power-Transistor = = = = Feature N-Channel  Enhancement mode  1 75°C operating temperature   Avalanche rated  dv/dt rated  Type Package SPP80N06S2-09 P-TO220-3-1 Q67060-S6025 SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 Maximum Ratings, °C, unless ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

Page 4

Power dissipation tot C SPP80N06S2-09 200 W 160 140 120 100 100 120 140 160 3 Safe operating area ...

Page 5

Typ. output characteristic =25° parameter µs p SPP80N06S2-09 190 P = 190W tot A l 160 140 120 100 ...

Page 6

Drain-source on-state resistance DS(on) j parameter : SPP80N06S2- 98% 10 typ -60 -20 ...

Page 7

Typ. avalanche energy par 380 mJ 320 280 240 200 160 120 105 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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