SPB80N06S2L11 Infineon Technologies, SPB80N06S2L11 Datasheet - Page 7

• Manufacturer Part Number: SPB80N06S2L11
• Description: OptiMOS Power-Transistor
• Manufacturer: Infineon Technologies

13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
parameter: I
AS
(BR)DSS
mJ
300
240
220
200
180
160
140
120
100
= f (T
V
80
60
40
20
66
62
60
58
56
54
52
50
D
0
-60
25
SPP80N06S2L-11
= 80 A , V
j
= f (T
)
45
-20
D
=10 mA
65
j
)
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25
°C
°C
T
T
Preliminary data
j
j


185
200
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP80N06S2L-11
10
Gate
D
20
= 80 A pulsed
)
30
0,2
40
V
DS max
SPB80N06S2L-11
SPP80N06S2L-11
50
60
0,8 V
70
DS max
2001-05-16
80
nC
Q
Gate
100