STGP10N60

Manufacturer Part NumberSTGP10N60
DescriptionN-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
ManufacturerSTMicroelectronics
STGP10N60 datasheets

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TYPE
V
V
CES
CE(sat )
STGP10N60L
600 V
< 1.95 V
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (V
LOW THRESHOLD VOLTAGE
(LOGIC LEVEL INPUT)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
APPLICATIONS
ELECTRONIC IGNITION
LIGHT DIMMER
STATIC RELAYS
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V
Collector-Emitter Voltage (V
CES
V
Reverse Battery Protection
ECR
V
G ate-Emitter Voltage
GE
I
Collector Current (continuous) at T
C
I
Collector Current (continuous) at T
C
I
( )
Collector Current (pulsed)
CM
P
T otal Dissipation at T
= 25
tot
c
Derating Factor
T
Storage T emperature
s tg
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
June 1999
N-CHANNEL 10A - 600V TO-220
LOGIC LEVEL IGBT
I
C
10 A
)
cesat
INTERNAL SCHEMATIC DIAGRAM
= 0)
GS
o
= 25
C
c
o
= 100
C
c
o
C
-65 to 175
STGP10N60L
3
2
1
TO-220
Value
Un it
600
V
25
V
15
V
25
A
20
A
100
A
125
W
o
0.83
W /
C
o
C
o
175
C
1/8

STGP10N60 Summary of contents

  • Page 1

    ... Pulse width limited by safe operating area June 1999 N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT cesat INTERNAL SCHEMATIC DIAGRAM = 100 -65 to 175 STGP10N60L TO-220 Value Un it 600 100 A 125 W o 0.83 ...

  • Page 2

    ... STGP10N60L THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink ELECTRICAL CHARACTERISTICS (T OFF Symbo l Parameter V Collector-Emitt er BR(c es) Breakdown Voltage I Collector cut-off CES ( Gate-Emitter Leakage GES Current ( Symbo l Parameter V Gate Threshold ...

  • Page 3

    ... 480 125 C j Thermal Impedance STGP10N60L Min. Typ. Max. Unit 0 2.5 mJ Min. Typ. Max. Unit 4 s 2.5 s 1 3.3 s 2.5 s 10.8 mJ 3/8 ...

  • Page 4

    ... STGP10N60L Output Characteristics Transconductance Collector-Emitter On Voltage vs Collector Current 4/8 Transfer Characteristics Collector-Emitter On Voltage vs Temperature Capacitance Variations ...

  • Page 5

    ... Gate Charge vs Gate-Emitter Voltage Gate Threshold vs Temperature Off Losses vs Gate Resistance STGP10N60L Latching Current vs Rg Off Losses vs Collector Current Off Losses vs Temperature 5/8 ...

  • Page 6

    ... STGP10N60L Switching Off Safe Operatin Area Fig. 1: Gate Charge test Circuit Fig. 3: Test Circuit For Inductive Load Switching 6/8 Fig. 2: Switching Times Test Circuit For Resistive Load ...

  • Page 7

    ... STGP10N60L inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C 7/8 ...

  • Page 8

    ... STGP10N60L Information furnished is believed to be accurate and reliable. However, STMicroelect r onics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice ...