MT8HTF12864HDZ Micron Semiconductor Products, MT8HTF12864HDZ Datasheet

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MT8HTF12864HDZ

Manufacturer Part Number
MT8HTF12864HDZ
Description
Ddr2 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR2 SDRAM SODIMM
MT8HTF12864HDZ – 1GB
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 1GB (128 Meg x 64)
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
• Halogen-free
Table 1: Key Timing Parameters
PDF: 09005aef831ec770
htf8c128x64hdz.pdf - Rev. C 3/10 EN
(SODIMM)
PC2-5300, or PC2-6400
tion
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= 1.8V
= 1.7–3.6V
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
t
CK
CL = 6
800
800
CL = 5
Data Rate (MT/s)
800
667
667
1
Figure 1: 200-Pin SODIMM (MO-224 R/C A)
Module height: 30mm (1.18in)
CL = 4
Options
• Operating temperature
• Package
• Frequency/CL
533
533
553
553
400
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (halogen-free)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
1GB (x64, DR) 200-Pin DDR2 SODIMM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency.
CL = 3
400
400
400
400
400
module offerings.
2
t
(ns)
12.5
RCD
15
15
15
15
A
A
≤ +85°C)
≤ +70°C)
© 2008 Micron Technology, Inc. All rights reserved.
1
(ns)
12.5
t
15
15
15
15
RP
Features
Marking
-800
-667
(ns)
t
D
55
55
55
55
55
T
Z
RC

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MT8HTF12864HDZ Summary of contents

Page 1

... DDR2 SDRAM SODIMM MT8HTF12864HDZ – 1GB Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 1GB (128 Meg x 64) • 1.8V DD • 1.7–3.6V DDSPD • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • ...

Page 2

... The data sheet for the base device can be found on Micron’s Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT8HTF12864HDZ-800G1. PDF: 09005aef831ec770 htf8c128x64hdz.pdf - Rev. C 3/10 EN ...

Page 3

Pin Assignments Table 4: Pin Assignments 200-Pin DDR2 SODIMM Front Pin Symbol Pin Symbol Pin DQS2 101 REF 103 DQ0 55 DQ18 105 7 DQ1 57 DQ19 107 9 V ...

Page 4

Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 5: ...

Page 5

Table 5: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef831ec770 ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# CS# DQS DQS0 DQS# DQS0# DM DM0 DQ DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 U1 DQ7 DQ DQS1 DQS DQS1# DQS# DM1 DM ...

Page 7

General Description DDR2 SDRAM modules are high-speed, CMOS dynamic random access memory mod- ules that use internally configured 4 or 8-bank DDR2 SDRAM devices. DDR2 SDRAM modules use DDR architecture to achieve high-speed operation. DDR2 architecture is essentially a 4n-prefetch ...

Page 8

Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data ...

Page 9

DRAM Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron's Web site. Module speed grades cor- relate with component speed grades. Table 7: Module and Component Speed Grades DDR2 ...

Page 10

I Specifications DD Table 8: DDR2 I Specifications and Conditions – 1GB (Die Revision E) DD Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com- ponent data sheet ...

Page 11

Table 8: DDR2 I Specifications and Conditions – 1GB (Die Revision E) (Continued) DD Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com- ponent data sheet Parameter Operating ...

Page 12

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 9: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 13

Module Dimensions Figure 3: 200-Pin DDR2 SODIMM 2.0 (0.079) R (2X) 1.8 (0.071) D (2X) 6.0 (0.236) 2.0 (0.079) Pin 200 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. Notes: 2. The dimensional diagram is ...

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