ST2341M Stanson Technology Co., Ltd., ST2341M Datasheet

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ST2341M

Manufacturer Part Number
ST2341M
Description
P Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ST2341MS23RG
Manufacturer:
STANSON
Quantity:
20 000
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
ST2341M is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN
PIN
PIN
PIN CONFIGURATION
SOT-23-3L
SOT-23-3L
SOT-23-3L
SOT-23-3L
PART
PART
PART
PART MARKING
SOT-23-3L
SOT-23-3L
SOT-23-3L
SOT-23-3L
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Y: Year Code
CONFIGURATION
CONFIGURATION
CONFIGURATION
1.Gate
MARKING
MARKING
MARKING
G G G G
1 1 1 1
1 1 1 1
2.Source
41YA
41YA
41YA
41YA
D D D D
3 3 3 3
3 3 3 3
A: Process Code
S S S S
2 2 2 2
2 2 2 2
3.Drain
FEATURE
FEATURE
P Channel Enhancement Mode MOSFET
FEATURE
FEATURE
@VGS = -4.5V
@VGS = -2.5V
@VGS = -1.8V
-20V/-2.8A, R
-20V/-2.8A, R
-20V/-2.3A, R
Super high density cell design for
extremely low R
Exceptional on-resistance and maximum
SOT-23-3L package design
DC current capability
DS(ON)
DS(ON)
DS(ON)
ST2341
ST2341
ST2341M M M M
ST2341
DS(ON)
ST2341 2006. Rev.1
= 47mΩ (Typ.)
= 66mΩ
= 100mΩ
-3.5A

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ST2341M Summary of contents

Page 1

... DESCRIPTION DESCRIPTION DESCRIPTION ST2341M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required ...

Page 2

... Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341M ST2341 ST2341 ST2341 P Channel Enhancement Mode MOSFET Symbol Symbol Symbol Symbol ...

Page 3

... V =0V GS F=1MH C z rss V =- d(on) =6 Ω =-1. =-4.5V t GEN d(off) =6 Ω ST2341 ST2341 ST2341M ST2341 -3.5A Min Min Min Min Typ Typ Typ Typ Max Max Max Unit Max Unit Unit Unit -20 V -0.9 V ±100 - mΩ ...

Page 4

... CHARACTERICTICS (25 ℃ Unless noted) TYPICAL TYPICAL TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341 ST2341 ST2341M ST2341 P Channel Enhancement Mode MOSFET ST2341 2006. Rev.1 -3.5A ...

Page 5

... CHARACTERICTICS (25 ℃ Unless noted) TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341 ST2341 ST2341M ST2341 P Channel Enhancement Mode MOSFET ST2341 2006. Rev.1 -3.5A ...

Page 6

... SOT-23-3L SOT-23-3L PACKAGE PACKAGE OUTLINE OUTLINE SOT-23-3L SOT-23-3L PACKAGE PACKAGE OUTLINE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341 ST2341 ST2341M ST2341 P Channel Enhancement Mode MOSFET ST2341 2006. Rev.1 -3.5A ...

Page 7

... STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341 ST2341 ST2341M ST2341 P Channel Enhancement Mode MOSFET ST2341 2006. Rev.1 -3.5A ...

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