SI3457BDV Vishay, SI3457BDV Datasheet - Page 2

• Manufacturer Part Number: SI3457BDV
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
www.vishay.com
2
Si3457BDV
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
2
a
a
J
V
= 25_C UNLESS OTHERWISE NOTED)
GS
3
= 10 thru 5 V
4
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
4 V
3 V
SD
t
t
rr
fs
gs
gd
r
f
g
5
)
6
V
DS
V
I
D
DS
^ −1 A, V
= −15 V, V
I
F
V
= −30 V, V
V
V
V
V
V
V
V
DS
= −1.7 A, di/dt = 100 A/ms
V
GS
GS
I
DS
DS
S
DS
DD
DD
Test Condition
DS
= −1.7 A, V
v −5 V, V
= V
= −10 V, I
= −4.5 V, I
= −15 V, I
= −30 V, V
= −15 V, R
= −15 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= −10 V, I
= −10 V, R
D
= 0 V, T
GS
GS
D
= −250 mA
D
D
GS
GS
L
L
= −5.0 A
= −5.0 A
= −3.7 A
= "20 V
= 15 W
= 15 W
= −10 V
= 0 V
= 0 V
J
D
20
16
12
= 85_C
g
8
4
0
= −5.0 A
= 6 W
0
1
V
GS
Transfer Characteristics
Min
−1.0
−20
− Gate-to-Source Voltage (V)
2
25_C
T
C
0.044
0.082
Typ
= 125_C
−0.8
12.5
2.1
3.5
10
10
30
22
25
7
S-40424—Rev. D, 15-Mar-04
3
Document Number: 72019
"100
Max
0.054
0.100
−1.2
−55_C
−3
−1
−5
19
15
15
45
35
60
4
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
5