SI3457BDV Vishay, SI3457BDV Datasheet - Page 3

• Manufacturer Part Number: SI3457BDV
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72019
S-40424—Rev. D, 15-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
GS
Source-Drain Diode Forward Voltage
0.2
= 5 A
2
On-Resistance vs. Drain Current
= 10 V
= 4.5 V
4
V
SD
Q
0.4
g
4
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
− Drain Current (A)
Gate Charge
8
0.6
6
T
J
= 150_C
0.8
8
12
V
GS
1.0
10
T
= 10 V
J
= 25_C
16
1.2
12
1.4
20
14
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
−25
D
GS
I
= 5 A
D
= 10 V
= 2 A
2
6
T
V
V
0
J
GS
DS
C
− Junction Temperature (_C)
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
12
4
Vishay Siliconix
I
C
50
D
iss
= 5 A
Si3457BDV
18
6
75
100
24
www.vishay.com
8
125
150
10
30
3