SI3457BDV Vishay, SI3457BDV Datasheet - Page 4

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SI3457BDV

Manufacturer Part Number
SI3457BDV
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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4
Si3457BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.6
0.4
0.2
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
I
D
−3
= 250 mA
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
10
0.1
100
10
1
−2
0.1
125
Limited
I
D(on)
Single Pulse
T
Square Wave Pulse Duration (sec)
r
A
DS(on)
150
V
= 25_C
DS
− Drain-to-Source Voltage (V)
Safe Operating Area
Limited
10
1
−1
BV
DSS
Limited
10
I
1
DM
50
40
30
20
10
Limited
0
10
−3
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
100
−2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Single Pulse Power
JM
10
− T
−1
t
A
Time (sec)
1
= P
t
2
DM
Z
1
thJA
thJA
100
S-40424—Rev. D, 15-Mar-04
t
t
1
2
(t)
Document Number: 72019
= 90_C/W
10
600
100
600

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