ZVN4210G Zetex Semiconductors plc., ZVN4210G Datasheet
ZVN4210G
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ZVN4210G Summary of contents
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... I 100 GSS I 10 DSS 100 I 2.5 D(on) R 1.5 DS(on) 1.8 250 fs C 100 iss C 40 oss 12 rss t 4 d(on d(off ZVN4210G D G VALUE 100 0 -55 to +150 V I =1mA =1mA 20V =100V =80V, V =0V, T=125° ...
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... ZVN4210G DRAIN-SOURCE DIODE CHARACTERISTICS PARAMETER Diode Forward Voltage (1) Reverse Recovery Time (to I =10%) R (1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device SYMBOL MIN ...
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... ZVN4210G TYPICAL CHARACTERISTICS Drain Source Voltage (Volts) DS Saturation Characteristics 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 - 100 T -Junction Temperature (°C) j Normalised R and V DS(on) GS(th) 200 160 120 -Drain Source Voltage (Volts) DS Capacitance v drain-source voltage 100 V GS= ...